Event Outline

The 3rd RAP Edge Photonics Seminar: Event Outline
Speaker Prof. Akira Satou [ Tohoku Univ. ]
Prof. Safumi Suzuki [ Institute of Science Tokyo ]
Date Tuesday, June 30, 2026
Opening hours 15:00 – 17:00
Venue Room W524-525, 5F, Cooperation Center, Wako Campus, RIKEN (Participation via Zoom is also available.)
Language Japanese
Attendance fee Free
Contact
More Infomation The 3rd RAP Edge Photonics Seminar

Registration

Please register using the link below.
Online participation via Zoom is available.
(Access information will be sent to you after completing the registration.)

https://krs2.riken.jp/m/registration_3rd_edgephotonics

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Talk 1

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Title: New Principle and New Structure Semiconductor Terahertz Devices for Beyond 5G

Speaker: Prof. Akira Satou (Tohoku University Research Institute of Electrical Communication)

Abstract: 

Future beyond-5G (B5G) wireless communication systems will unite the cyberspace with the real world (physical space), enabling disruptive technologies such as telemedicine and telecare, autonomous transportation systems, and immersive extended reality. To fulfil performance requirements of the B5G, ultrahigh capacity, ultralow latency, ultra-massive connectivity, and ultralow power-consumption, the use of the sub-terahertz (THz)/THz frequency bands as carrier frequencies as well as the fullcoherent convergence between fiber and wireless links are expected to be effective. 

In this talk, I will review recent progress in the development of our new principle and new structure semiconductor THz devices. First, I will talk about THz plasmonic detectors based on InP high-electron-mobility transistors (HEMTs) [1]. Second, I will talk about the so-called uni-traveling-carrier photodiode-integrated HEMT as optical-wireless-convergence devices [2]. 

[1] A. Satou et al., Nanophoton. 12, 4283 (2023). 

[2] A. Satou et al., J. Lightwave Technol. 39, 3341 (2021). 

Talk 2

Title: Resonant-tunneling-diode terahertz signal generator for sensing applications

Speaker: Prof. Safumi Suzuki (Institute of Science Tokyo)

Abstract:

The terahertz frequency band lies between microwaves and infrared light, and sensing technologies that exploit its unique properties have attracted considerable attention as applications close to practical deployment. Resonant tunneling diode (RTD)-based terahertz signal sources are mass-producible semiconductor devices that offer compact size, room-temperature operation, low power consumption, and low cost, making them well suited for such applications. This presentation introduces the fundamental operating principles of RTD devices, recent advances in improving their core performance, including high-frequency oscillation and high-output-power operation, the development of new functionalities such as frequency-comb generation, and the latest progress in application development based on these devices.