The 3rd RAP Edge Photonics Seminar
開催概要
| 講師 | 佐藤 昭（東北大学、教授） 鈴木 左文（東京科学大学、教授） |
|---|---|
| 開催日 | 2026年6月30日（火） |
| 開催時間 | 15:00〜17:00 |
| 会場 | 理化学研究所 和光地区 研究交流棟 W524-525（オンライン参加可） |
| 発表言語 | 日本語 |
| 参加費 | 無料 |
| お問い合わせ | |
| 詳細情報 | The 3rd RAP Edge Photonics Seminar |
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https://krs2.riken.jp/m/registration_3rd_edgephotonics
Talk 1
題目：Beyond 5Gに向けた新原理・新構造半導体テラヘルツデバイス
講師：佐藤 昭（東北大学 電気通信研究所、教授）
要旨：
Future beyond-5G (B5G) wireless communication systems will unite the cyberspace with the real world (physical space), enabling disruptive technologies such as telemedicine and telecare, autonomous transportation systems, and immersive extended reality. To fulfil performance requirements of the B5G, ultrahigh capacity, ultralow latency, ultra-massive connectivity, and ultralow power-consumption, the use of the sub-terahertz (THz)/THz frequency bands as carrier frequencies as well as the full–coherent convergence between fiber and wireless links are expected to be effective.
In this talk, I will review recent progress in the development of our new principle and new structure semiconductor THz devices. First, I will talk about THz plasmonic detectors based on InP high-electron-mobility transistors (HEMTs) [1]. Second, I will talk about the so-called uni-traveling-carrier photodiode-integrated HEMT as optical-wireless-convergence devices [2].
[1] A. Satou et al., Nanophoton. 12, 4283 (2023).
[2] A. Satou et al., J. Lightwave Technol. 39, 3341 (2021).
Talk 2
題目：センシング応用に向けたテラヘルツ共鳴トンネルダイオード信号源
講師：鈴木 左文（東京科学大学、教授）
要旨：
The terahertz frequency band lies between microwaves and infrared light, and sensing technologies that exploit its unique properties have attracted considerable attention as applications close to practical deployment. Resonant tunneling diode (RTD)-based terahertz signal sources are mass-producible semiconductor devices that offer compact size, room-temperature operation, low power consumption, and low cost, making them well suited for such applications. This presentation introduces the fundamental operating principles of RTD devices, recent advances in improving their core performance, including high-frequency oscillation and high-output-power operation, the development of new functionalities such as frequency-comb generation, and the latest progress in application development based on these devices.